Direct-write single electron transistors by focused electron beam induced deposition
نویسندگان
چکیده
منابع مشابه
Focused electron beam induced deposition: A perspective
BACKGROUND Focused electron beam induced deposition (FEBID) is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is ...
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In many areas of science and technology, patterned films and surfaces play a key role in engineering and development of advanced materials. Here, we introduce a new generic technique for the fabrication of polysaccharide nano-structures via focused electron beam induced conversion (FEBIC). For the proof of principle, organosoluble trimethylsilyl-cellulose (TMSC) thin films have been deposited b...
متن کاملIn situ growth optimization in focused electron-beam induced deposition
We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID). It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The e...
متن کاملCorrection: Modelling focused electron beam induced deposition beyond Langmuir adsorption
[This corrects the article DOI: 10.3762/bjnano.8.214.].
متن کاملModelling focused electron beam induced deposition beyond Langmuir adsorption
In this work, the continuum model for focused electron beam induced deposition (FEBID) is generalized to account for multilayer adsorption processes. Two types of adsorption energies, describing both physisorption and spontaneous chemisorption, are included. Steady state solutions under no diffusion are investigated and compared under a wide range of conditions. The different growth regimes obs...
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ژورنال
عنوان ژورنال: Nano Futures
سال: 2019
ISSN: 2399-1984
DOI: 10.1088/2399-1984/ab151c